| PART |
Description |
Maker |
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32005BT KM23V32005BET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32005BG |
32M-Bit (4Mx8/2Mx16) COMS MASK ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT49BV3218-90TI AT49BV3218-90CI AT49BV3218T-11CI A |
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Wakefield Thermal Solutions, Inc.
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| E28F320J3A-110 |
IC,EEPROM,FLASH,2MX16/4MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| K3N6C3000E-DC |
32M-Bit (4Mx8) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3P6V2000B-SC |
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
